 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE(sat) typ. = 2.4 V C C TO-247 AD G E G E G C E C (TAB) IXEH 40N120 IXEH 40N120D1 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 39 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900V; VGE = 15 V; RG = 39 ; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 60 40 50 VCES 10 300 V V A A A s W Features * NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits * optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current * TO-247 package - industry standard outline - epoxy meets UL 94V-0 Applications Symbol Conditions (TVJ Characteristic Values = 25C, unless otherwise specified) min. typ. max. 2.4 2.8 4.5 0.4 200 85 50 440 50 6.1 3.0 2 250 3.0 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.42 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 40 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V * AC drives * DC drives and choppers * Uninteruptible power supplies (UPS) * switched-mode and resonant-mode power supplies * inductive heating, cookers Inductive load, TVJ = 125C VCE = 600 V; IC = 40 A VGE = 15 V; RG = 39 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 25 A (c) 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 321 IXEH 40N120 IXEH 40N120D1 Diode [D1 version only] Equivalent Circuits for Simulation Conduction Symbol IF25 IF90 Conditions TC = 25C TC = 90C Maximum Ratings 60 35 A A IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.95 V; R0 = 45 m Diode (typ. at TJ = 125C) V0 = 1.26V; R0 = 15 m Thermal Response Symbol VF IRM t rr Erec(off) RthJC Component Symbol TVJ Tstg Md Symbol RthCH Weight Conditions IF = 40 A; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = -500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V Characteristic Values min. typ. max. 2.6 2.0 51 180 1.8 3.0 V V A ns mJ 1.0 K/W Conditions Maximum Ratings -55...+150 -55...+150 C C Nm IGBT Cth1 = 0.007 J/K; Rth1 = 0.215 K/W Cth2 = 0.187 J/K; Rth2 = 0.205 K/W Diode Cth1 = 0.006 J/K; Rth1 = 0.649 K/W Cth2 = 0.113 J/K; Rth2 = 0.351 K/W mounting torque Conditions with heatsink compound 0.8...1.2 TO-247 AD Outline Characteristic Values min. typ. max. 0.25 6 K/W g Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 321 (c) 2003 IXYS All rights reserved 2-4 IXEH 40N120 IXEH 40N120D1 120 A 120 A 100 IC 80 60 11 V 11 V 13 V VGE = 17 V 15 V 13 V VGE = 17 V 15 V 100 IC 80 60 40 20 0 0 1 2 3 4 VCE 40 9V TVJ = 25C 20 0 9V TVJ = 125C 5 6V7 0 1 2 3 4 5 VCE 6V7 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 120 A VCE = 20 V 100 IC IF 90 A 75 60 45 TVJ = 125C TVJ = 25C 80 60 40 TVJ = 125C 30 15 TVJ = 25C 20 0 4 6 8 10 12 VGE 0 14 V 16 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 20 V 10 K/W ZthJC 1 diode [D1 version only] IGBT 15 VGE 10 0.1 5 VCE = 600 V IC = 35 A 0.01 single pulse 0 0 40 80 120 160nC QG 0.001 MUBW3512E7 200 0.00001 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 5 Typ. turn on gate charge Fig. 6 Typ. transient thermal impedance 321 (c) 2003 IXYS All rights reserved 3-4 IXEH 40N120 IXEH 40N120D1 20 mJ td(on) 100 ns 90 80 70 t Eoff 60 VCE = 600 V VGE = 15 V RG = 39 TVJ = 125C 6 mJ VCE = 600 V VGE = 15 V RG = 39 TVJ = 125C Eoff 1200 ns 1000 800 t 600 16 Eon 4 12 8 4 0 0 20 tr Eon Erec(off) 50 40 30 20 10 0 2 td(off) 400 200 0 0 20 40 IC 60 A tf 40 IC 60 A 80 0 80 Fig. 7 Typ. turn on energy and switching times versus collector current 160 Fig. 8 Typ. turn off energy and switching times versus collector current 800 ns 600 t 8 mJ Eon 6 VCE = 600 V VGE = 15 V IC = 35 A TVJ = 125C 4 mJ t Eoff Eon ns 120 td(on) 3 VCE = 600 V VGE = 15 V IC = 35 A TVJ = 125C Eoff 80 4 tr Erec(off) 2 td(off) 400 2 40 1 tf 200 0 10 20 30 40 50 60 RG 70 80 0 0 10 20 30 40 50 RG 60 70 80 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 70 350 12 60 TVCE=600V = 125C VJ V =+-15V IF jGE = 30 A T =125C I VF=35A 600 V = R 75 15 24 39 56 RG= trr [ns] 200 75 56 tRR 39 24 15 150 Qrr [C] IRM 300 10 TVJ = 125C VR = 600 V 75 RG= 56 39 15 24 70A 50 250 8 50A 35A 6 IF = 4 15A 40 IRM [A] 30 20 100 7,5A 2 10 50 0 0 200 400 600 800 1000 -diF/dt [A/s] 1200 1400 1600 0 1800 0 0 200 400 600 800 1000 -di F /dt [A/s] 1200 1400 1600 1800 Fig. 11 Typ. turn off characteristics of free wheeling diode Fig. 12 Typ. turn off characteristics of free wheeling diode 321 (c) 2003 IXYS All rights reserved 4-4 |
Price & Availability of IXEH40N120
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |